IGN1011L70

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Gamintojo dalis	IGN1011L70
Gamintojas	Integra Technologies
apibūdinimas	GAN, RF POWER TRANSISTOR, L-BAND
Kategorija	atskiri puslaidininkiniai gaminiai
Šeima	tranzistoriai - fetai, mosfetai - rf
Gyvenimo ciklas:	New from this manufacturer.
Pristatymas:	DHL FedEx Ups TNT EMS
Mokėjimas	T/T Paypal Visa MoneyGram Western Union
Duomenų lapas	IGN1011L70 PDF

Prieinamumas

Prekyboje	252 675
Vieneto kaina	$ 222.00000

IGN1011L70 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IGN1011L70 Specifikacijos

Tipas	apibūdinimas
series:	-
package:	Bulk
part status:	Active
transistor type:	GaN HEMT
frequency:	1.03GHz ~ 1.09GHz
gain:	22dB
voltage - test:	50 V
current rating (amps):	-
noise figure:	-
current - test:	22 mA
power - output:	80W
voltage - rated:	120 V
package / case:	PL32A2
supplier device package:	PL32A2

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.