EPC2110ENGRT

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Gamintojo dalis	EPC2110ENGRT
Gamintojas	EPC
apibūdinimas	GAN TRANS 2N-CH 120V BUMPED DIE
Kategorija	atskiri puslaidininkiniai gaminiai
Šeima	tranzistoriai – fetai, mosfetai – masyvai
Gyvenimo ciklas:	New from this manufacturer.
Pristatymas:	DHL FedEx Ups TNT EMS
Mokėjimas	T/T Paypal Visa MoneyGram Western Union
Duomenų lapas	EPC2110ENGRT PDF

Prieinamumas

Prekyboje	261 187
Vieneto kaina	$ 2.37000

EPC2110ENGRT Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

EPC2110ENGRT Specifikacijos

Tipas	apibūdinimas
series:	eGaN®
package:	Tape & Reel (TR)Cut Tape (CT)
part status:	Active
fet type:	2 N-Channel (Dual) Common Source
fet feature:	GaNFET (Gallium Nitride)
drain to source voltage (vdss):	120V
current - continuous drain (id) @ 25°c:	3.4A
rds on (max) @ id, vgs:	60mOhm @ 4A, 5V
vgs(th) (max) @ id:	2.5V @ 700µA
gate charge (qg) (max) @ vgs:	0.8nC @ 5V
input capacitance (ciss) (max) @ vds:	80pF @ 60V
power - max:	-
operating temperature:	-40°C ~ 150°C (TJ)
mounting type:	Surface Mount
package / case:	Die
supplier device package:	Die

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.