SCTWA50N120

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Gamintojo dalis	SCTWA50N120
Gamintojas	STMicroelectronics
apibūdinimas	SICFET N-CH 1200V 65A HIP247
Kategorija	atskiri puslaidininkiniai gaminiai
Šeima	tranzistoriai - fetai, mosfetai - vienviečiai
Gyvenimo ciklas:	New from this manufacturer.
Pristatymas:	DHL FedEx Ups TNT EMS
Mokėjimas	T/T Paypal Visa MoneyGram Western Union
Duomenų lapas	SCTWA50N120 PDF

Prieinamumas

Prekyboje	1 240
Vieneto kaina	$ 29.63000

SCTWA50N120 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SCTWA50N120 Specifikacijos

Tipas	apibūdinimas
series:	-
package:	Tube
part status:	Active
fet type:	N-Channel
technology:	SiCFET (Silicon Carbide)
drain to source voltage (vdss):	1200 V
current - continuous drain (id) @ 25°c:	65A (Tc)
drive voltage (max rds on, min rds on):	20V
rds on (max) @ id, vgs:	69mOhm @ 40A, 20V
vgs(th) (max) @ id:	3V @ 1mA
gate charge (qg) (max) @ vgs:	122 nC @ 20 V
vgs (max):	+25V, -10V
input capacitance (ciss) (max) @ vds:	1900 pF @ 400 V
fet feature:	-
power dissipation (max):	318W (Tc)
operating temperature:	-55°C ~ 200°C (TJ)
mounting type:	Through Hole
supplier device package:	HiP247™
package / case:	TO-247-3

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.