SIHH21N65EF-T1-GE3

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Gamintojo dalis	SIHH21N65EF-T1-GE3
Gamintojas	Vishay / Siliconix
apibūdinimas	MOSFET N-CH 650V 19.8A PPAK 8X8
Kategorija	atskiri puslaidininkiniai gaminiai
Šeima	tranzistoriai - fetai, mosfetai - vienviečiai
Gyvenimo ciklas:	New from this manufacturer.
Pristatymas:	DHL FedEx Ups TNT EMS
Mokėjimas	T/T Paypal Visa MoneyGram Western Union
Duomenų lapas	SIHH21N65EF-T1-GE3 PDF

Prieinamumas

Prekyboje	3 651
Vieneto kaina	$ 7.13000

SIHH21N65EF-T1-GE3 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIHH21N65EF-T1-GE3 Specifikacijos

Tipas	apibūdinimas
series:	-
package:	Tape & Reel (TR)Cut Tape (CT)
part status:	Active
fet type:	N-Channel
technology:	MOSFET (Metal Oxide)
drain to source voltage (vdss):	650 V
current - continuous drain (id) @ 25°c:	19.8A (Tc)
drive voltage (max rds on, min rds on):	10V
rds on (max) @ id, vgs:	180mOhm @ 11A, 10V
vgs(th) (max) @ id:	4V @ 250µA
gate charge (qg) (max) @ vgs:	102 nC @ 10 V
vgs (max):	±30V
input capacitance (ciss) (max) @ vds:	2396 pF @ 100 V
fet feature:	-
power dissipation (max):	156W (Tc)
operating temperature:	-55°C ~ 150°C (TJ)
mounting type:	Surface Mount
supplier device package:	PowerPAK® 8 x 8
package / case:	8-PowerTDFN

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.