SPP18P06PHXKSA1

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Gamintojo dalis	SPP18P06PHXKSA1
Gamintojas	IR (Infineon Technologies)
apibūdinimas	MOSFET P-CH 60V 18.7A TO220-3
Kategorija	atskiri puslaidininkiniai gaminiai
Šeima	tranzistoriai - fetai, mosfetai - vienviečiai
Gyvenimo ciklas:	New from this manufacturer.
Pristatymas:	DHL FedEx Ups TNT EMS
Mokėjimas	T/T Paypal Visa MoneyGram Western Union
Duomenų lapas	SPP18P06PHXKSA1 PDF

Prieinamumas

Prekyboje	898
Vieneto kaina	$ 1.41000

SPP18P06PHXKSA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SPP18P06PHXKSA1 Specifikacijos

Tipas	apibūdinimas
series:	SIPMOS®
package:	Tube
part status:	Active
fet type:	P-Channel
technology:	MOSFET (Metal Oxide)
drain to source voltage (vdss):	60 V
current - continuous drain (id) @ 25°c:	18.7A (Ta)
drive voltage (max rds on, min rds on):	10V
rds on (max) @ id, vgs:	130mOhm @ 13.2A, 10V
vgs(th) (max) @ id:	4V @ 1mA
gate charge (qg) (max) @ vgs:	28 nC @ 10 V
vgs (max):	±20V
input capacitance (ciss) (max) @ vds:	860 pF @ 25 V
fet feature:	-
power dissipation (max):	81.1W (Ta)
operating temperature:	-55°C ~ 175°C (TJ)
mounting type:	Through Hole
supplier device package:	PG-TO220-3
package / case:	TO-220-3

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