SCT3022ALGC11

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Gamintojo dalis	SCT3022ALGC11
Gamintojas	ROHM Semiconductor
apibūdinimas	SICFET N-CH 650V 93A TO247N
Kategorija	atskiri puslaidininkiniai gaminiai
Šeima	tranzistoriai - fetai, mosfetai - vienviečiai
Gyvenimo ciklas:	New from this manufacturer.
Pristatymas:	DHL FedEx Ups TNT EMS
Mokėjimas	T/T Paypal Visa MoneyGram Western Union
Duomenų lapas	SCT3022ALGC11 PDF

Prieinamumas

Prekyboje	964
Vieneto kaina	$ 46.27000

SCT3022ALGC11 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SCT3022ALGC11 Specifikacijos

Tipas	apibūdinimas
series:	-
package:	Tube
part status:	Active
fet type:	N-Channel
technology:	SiCFET (Silicon Carbide)
drain to source voltage (vdss):	650 V
current - continuous drain (id) @ 25°c:	93A (Tc)
drive voltage (max rds on, min rds on):	18V
rds on (max) @ id, vgs:	28.6mOhm @ 36A, 18V
vgs(th) (max) @ id:	5.6V @ 18.2mA
gate charge (qg) (max) @ vgs:	133 nC @ 18 V
vgs (max):	+22V, -4V
input capacitance (ciss) (max) @ vds:	2208 pF @ 500 V
fet feature:	-
power dissipation (max):	339W (Tc)
operating temperature:	175°C (TJ)
mounting type:	Through Hole
supplier device package:	TO-247N
package / case:	TO-247-3

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