TSM60N1R4CH C5G

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Gamintojo dalis	TSM60N1R4CH C5G
Gamintojas	TSC (Taiwan Semiconductor)
apibūdinimas	MOSFET N-CH 600V 3.3A TO251
Kategorija	atskiri puslaidininkiniai gaminiai
Šeima	tranzistoriai - fetai, mosfetai - vienviečiai
Gyvenimo ciklas:	New from this manufacturer.
Pristatymas:	DHL FedEx Ups TNT EMS
Mokėjimas	T/T Paypal Visa MoneyGram Western Union
Duomenų lapas	TSM60N1R4CH C5G PDF

Prieinamumas

Prekyboje	622 117
Vieneto kaina	$ 0.49320

TSM60N1R4CH C5G Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

TSM60N1R4CH C5G Specifikacijos

Tipas	apibūdinimas
series:	-
package:	Tube
part status:	Not For New Designs
fet type:	N-Channel
technology:	MOSFET (Metal Oxide)
drain to source voltage (vdss):	600 V
current - continuous drain (id) @ 25°c:	3.3A (Tc)
drive voltage (max rds on, min rds on):	10V
rds on (max) @ id, vgs:	1.4Ohm @ 2A, 10V
vgs(th) (max) @ id:	4V @ 250µA
gate charge (qg) (max) @ vgs:	7.7 nC @ 10 V
vgs (max):	±30V
input capacitance (ciss) (max) @ vds:	370 pF @ 100 V
fet feature:	-
power dissipation (max):	38W (Tc)
operating temperature:	-55°C ~ 150°C (TJ)
mounting type:	Through Hole
supplier device package:	TO-251 (IPAK)
package / case:	TO-251-3 Short Leads, IPak, TO-251AA

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