RQ3E180GNTB

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Gamintojo dalis	RQ3E180GNTB
Gamintojas	ROHM Semiconductor
apibūdinimas	MOSFET N-CH 30V 18A 8HSMT
Kategorija	atskiri puslaidininkiniai gaminiai
Šeima	tranzistoriai - fetai, mosfetai - vienviečiai
Gyvenimo ciklas:	New from this manufacturer.
Pristatymas:	DHL FedEx Ups TNT EMS
Mokėjimas	T/T Paypal Visa MoneyGram Western Union
Duomenų lapas	RQ3E180GNTB PDF

Prieinamumas

Prekyboje	3 000
Vieneto kaina	$ 0.65000

RQ3E180GNTB Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

RQ3E180GNTB Specifikacijos

Tipas	apibūdinimas
series:	-
package:	Tape & Reel (TR)Cut Tape (CT)
part status:	Active
fet type:	N-Channel
technology:	MOSFET (Metal Oxide)
drain to source voltage (vdss):	30 V
current - continuous drain (id) @ 25°c:	18A (Ta)
drive voltage (max rds on, min rds on):	4.5V, 10V
rds on (max) @ id, vgs:	4.3mOhm @ 18A, 10V
vgs(th) (max) @ id:	2.5V @ 1mA
gate charge (qg) (max) @ vgs:	22.4 nC @ 10 V
vgs (max):	±20V
input capacitance (ciss) (max) @ vds:	1520 pF @ 15 V
fet feature:	-
power dissipation (max):	2W (Ta)
operating temperature:	150°C (TJ)
mounting type:	Surface Mount
supplier device package:	8-HSMT (3.2x3)
package / case:	8-PowerVDFN

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.