IMW120R030M1HXKSA1

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Gamintojo dalis	IMW120R030M1HXKSA1
Gamintojas	IR (Infineon Technologies)
apibūdinimas	SICFET N-CH 1.2KV 56A TO247-3
Kategorija	atskiri puslaidininkiniai gaminiai
Šeima	tranzistoriai - fetai, mosfetai - vienviečiai
Gyvenimo ciklas:	New from this manufacturer.
Pristatymas:	DHL FedEx Ups TNT EMS
Mokėjimas	T/T Paypal Visa MoneyGram Western Union
Duomenų lapas	IMW120R030M1HXKSA1 PDF

Prieinamumas

Prekyboje	668
Vieneto kaina	$ 22.83000

IMW120R030M1HXKSA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IMW120R030M1HXKSA1 Specifikacijos

Tipas	apibūdinimas
series:	CoolSiC™
package:	Tube
part status:	Active
fet type:	N-Channel
technology:	SiCFET (Silicon Carbide)
drain to source voltage (vdss):	1.2 kV
current - continuous drain (id) @ 25°c:	56A (Tc)
drive voltage (max rds on, min rds on):	15V, 18V
rds on (max) @ id, vgs:	40mOhm @ 25A, 18V
vgs(th) (max) @ id:	5.7V @ 10mA
gate charge (qg) (max) @ vgs:	63 nC @ 18 V
vgs (max):	+23V, -7V
input capacitance (ciss) (max) @ vds:	2.12 nF @ 800 V
fet feature:	-
power dissipation (max):	227W (Tc)
operating temperature:	-55°C ~ 175°C (TJ)
mounting type:	Through Hole
supplier device package:	PG-TO247-3-41
package / case:	TO-247-3

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.