IMBG120R090M1HXTMA1

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Gamintojo dalis	IMBG120R090M1HXTMA1
Gamintojas	IR (Infineon Technologies)
apibūdinimas	TRANS SJT N-CH 1.2KV 26A TO263
Kategorija	atskiri puslaidininkiniai gaminiai
Šeima	tranzistoriai - fetai, mosfetai - vienviečiai
Gyvenimo ciklas:	New from this manufacturer.
Pristatymas:	DHL FedEx Ups TNT EMS
Mokėjimas	T/T Paypal Visa MoneyGram Western Union
Duomenų lapas	IMBG120R090M1HXTMA1 PDF

Prieinamumas

Prekyboje	466 828
Vieneto kaina	$ 14.47000

IMBG120R090M1HXTMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IMBG120R090M1HXTMA1 Specifikacijos

Tipas	apibūdinimas
series:	CoolSiC™
package:	Tape & Reel (TR)Cut Tape (CT)
part status:	Active
fet type:	N-Channel
technology:	SiC (Silicon Carbide Junction Transistor)
drain to source voltage (vdss):	1.2 kV
current - continuous drain (id) @ 25°c:	26A (Tc)
drive voltage (max rds on, min rds on):	-
rds on (max) @ id, vgs:	125mOhm @ 8.5A, 18V
vgs(th) (max) @ id:	5.7V @ 3.7mA
gate charge (qg) (max) @ vgs:	23 nC @ 18 V
vgs (max):	+18V, -15V
input capacitance (ciss) (max) @ vds:	763 pF @ 800 V
fet feature:	Standard
power dissipation (max):	136W (Tc)
operating temperature:	-55°C ~ 175°C (TJ)
mounting type:	Surface Mount
supplier device package:	PG-TO263-7-12
package / case:	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.