FQA11N90-F109

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Gamintojo dalis	FQA11N90-F109
Gamintojas	Sanyo Semiconductor/ON Semiconductor
apibūdinimas	MOSFET N-CH 900V 11.4A TO3PN
Kategorija	atskiri puslaidininkiniai gaminiai
Šeima	tranzistoriai - fetai, mosfetai - vienviečiai
Gyvenimo ciklas:	New from this manufacturer.
Pristatymas:	DHL FedEx Ups TNT EMS
Mokėjimas	T/T Paypal Visa MoneyGram Western Union
Duomenų lapas	FQA11N90-F109 PDF

Prieinamumas

Prekyboje	240
Vieneto kaina	$ 4.06000

FQA11N90-F109 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

FQA11N90-F109 Specifikacijos

Tipas	apibūdinimas
series:	QFET®
package:	Tube
part status:	Active
fet type:	N-Channel
technology:	MOSFET (Metal Oxide)
drain to source voltage (vdss):	900 V
current - continuous drain (id) @ 25°c:	11.4A (Tc)
drive voltage (max rds on, min rds on):	10V
rds on (max) @ id, vgs:	960mOhm @ 5.7A, 10V
vgs(th) (max) @ id:	5V @ 250µA
gate charge (qg) (max) @ vgs:	94 nC @ 10 V
vgs (max):	±30V
input capacitance (ciss) (max) @ vds:	3500 pF @ 25 V
fet feature:	-
power dissipation (max):	300W (Tc)
operating temperature:	-55°C ~ 150°C (TJ)
mounting type:	Through Hole
supplier device package:	TO-3PN
package / case:	TO-3P-3, SC-65-3

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