IPB038N12N3GATMA1

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Gamintojo dalis	IPB038N12N3GATMA1
Gamintojas	IR (Infineon Technologies)
apibūdinimas	MOSFET N-CH 120V 120A D2PAK
Kategorija	atskiri puslaidininkiniai gaminiai
Šeima	tranzistoriai - fetai, mosfetai - vienviečiai
Gyvenimo ciklas:	New from this manufacturer.
Pristatymas:	DHL FedEx Ups TNT EMS
Mokėjimas	T/T Paypal Visa MoneyGram Western Union
Duomenų lapas	IPB038N12N3GATMA1 PDF

Prieinamumas

Prekyboje	2
Vieneto kaina	$ 6.17000

IPB038N12N3GATMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPB038N12N3GATMA1 Specifikacijos

Tipas	apibūdinimas
series:	OptiMOS™
package:	Tape & Reel (TR)Cut Tape (CT)
part status:	Active
fet type:	N-Channel
technology:	MOSFET (Metal Oxide)
drain to source voltage (vdss):	120 V
current - continuous drain (id) @ 25°c:	120A (Tc)
drive voltage (max rds on, min rds on):	10V
rds on (max) @ id, vgs:	3.8mOhm @ 100A, 10V
vgs(th) (max) @ id:	4V @ 270µA
gate charge (qg) (max) @ vgs:	211 nC @ 10 V
vgs (max):	±20V
input capacitance (ciss) (max) @ vds:	13800 pF @ 60 V
fet feature:	-
power dissipation (max):	300W (Tc)
operating temperature:	-55°C ~ 175°C (TJ)
mounting type:	Surface Mount
supplier device package:	D²PAK (TO-263AB)
package / case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.