G2R1000MT17D

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Gamintojo dalis	G2R1000MT17D
Gamintojas	GeneSiC Semiconductor
apibūdinimas	SIC MOSFET N-CH 4A TO247-3
Kategorija	atskiri puslaidininkiniai gaminiai
Šeima	tranzistoriai - fetai, mosfetai - vienviečiai
Gyvenimo ciklas:	New from this manufacturer.
Pristatymas:	DHL FedEx Ups TNT EMS
Mokėjimas	T/T Paypal Visa MoneyGram Western Union
Duomenų lapas	G2R1000MT17D PDF

Prieinamumas

Prekyboje	267 553
Vieneto kaina	$ 4.86000

G2R1000MT17D Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

G2R1000MT17D Specifikacijos

Tipas	apibūdinimas
series:	G2R™
package:	Tube
part status:	Active
fet type:	N-Channel
technology:	SiCFET (Silicon Carbide)
drain to source voltage (vdss):	1700 V
current - continuous drain (id) @ 25°c:	4A (Tc)
drive voltage (max rds on, min rds on):	20V
rds on (max) @ id, vgs:	1.2Ohm @ 2A, 20V
vgs(th) (max) @ id:	4V @ 2mA
gate charge (qg) (max) @ vgs:	-
vgs (max):	+20V, -5V
input capacitance (ciss) (max) @ vds:	139 pF @ 1000 V
fet feature:	-
power dissipation (max):	53W (Tc)
operating temperature:	-55°C ~ 175°C (TJ)
mounting type:	Through Hole
supplier device package:	TO-247-3
package / case:	TO-247-3

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.