GA50JT12-247

Vaizdas skirtas nuorodai, susisiekite su mumis, kad gautumėte tikrą vaizdą

Gamintojo dalis	GA50JT12-247
Gamintojas	GeneSiC Semiconductor
apibūdinimas	TRANS SJT 1200V 100A TO247AB
Kategorija	atskiri puslaidininkiniai gaminiai
Šeima	tranzistoriai - fetai, mosfetai - vienviečiai
Gyvenimo ciklas:	New from this manufacturer.
Pristatymas:	DHL FedEx Ups TNT EMS
Mokėjimas	T/T Paypal Visa MoneyGram Western Union
Duomenų lapas	GA50JT12-247 PDF

Prieinamumas

Prekyboje	6
Vieneto kaina	$ 99.01000

GA50JT12-247 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

GA50JT12-247 Specifikacijos

Tipas	apibūdinimas
series:	-
package:	Tube
part status:	Obsolete
fet type:	-
technology:	SiC (Silicon Carbide Junction Transistor)
drain to source voltage (vdss):	1200 V
current - continuous drain (id) @ 25°c:	100A (Tc)
drive voltage (max rds on, min rds on):	-
rds on (max) @ id, vgs:	25mOhm @ 50A
vgs(th) (max) @ id:	-
gate charge (qg) (max) @ vgs:	-
vgs (max):	-
input capacitance (ciss) (max) @ vds:	7209 pF @ 800 V
fet feature:	-
power dissipation (max):	583W (Tc)
operating temperature:	175°C (TJ)
mounting type:	Through Hole
supplier device package:	TO-247AB
package / case:	TO-247-3

Shopping Guide

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