FQU13N10LTU

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Gamintojo dalis	FQU13N10LTU
Gamintojas	Sanyo Semiconductor/ON Semiconductor
apibūdinimas	MOSFET N-CH 100V 10A IPAK
Kategorija	atskiri puslaidininkiniai gaminiai
Šeima	tranzistoriai - fetai, mosfetai - vienviečiai
Gyvenimo ciklas:	New from this manufacturer.
Pristatymas:	DHL FedEx Ups TNT EMS
Mokėjimas	T/T Paypal Visa MoneyGram Western Union
Duomenų lapas	FQU13N10LTU PDF

Prieinamumas

Prekyboje	1 351
Vieneto kaina	$ 0.82000

FQU13N10LTU Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

FQU13N10LTU Specifikacijos

Tipas	apibūdinimas
series:	QFET®
package:	Tube
part status:	Active
fet type:	N-Channel
technology:	MOSFET (Metal Oxide)
drain to source voltage (vdss):	100 V
current - continuous drain (id) @ 25°c:	10A (Tc)
drive voltage (max rds on, min rds on):	5V, 10V
rds on (max) @ id, vgs:	180mOhm @ 5A, 10V
vgs(th) (max) @ id:	2V @ 250µA
gate charge (qg) (max) @ vgs:	12 nC @ 5 V
vgs (max):	±20V
input capacitance (ciss) (max) @ vds:	520 pF @ 25 V
fet feature:	-
power dissipation (max):	2.5W (Ta), 40W (Tc)
operating temperature:	-55°C ~ 150°C (TJ)
mounting type:	Through Hole
supplier device package:	I-PAK
package / case:	TO-251-3 Short Leads, IPak, TO-251AA

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