FAM65HR51DS2

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Gamintojo dalis	FAM65HR51DS2
Gamintojas	Sanyo Semiconductor/ON Semiconductor
apibūdinimas	IGBT MODULE 650V 33A 135W
Kategorija	atskiri puslaidininkiniai gaminiai
Šeima	tranzistoriai - igbts - moduliai
Gyvenimo ciklas:	New from this manufacturer.
Pristatymas:	DHL FedEx Ups TNT EMS
Mokėjimas	T/T Paypal Visa MoneyGram Western Union

Prieinamumas

Prekyboje	637 942
Vieneto kaina	$ 62.75194

FAM65HR51DS2 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

FAM65HR51DS2 Specifikacijos

Tipas	apibūdinimas
series:	-
package:	Tube
part status:	Active
igbt type:	-
configuration:	Half Bridge Inverter
voltage - collector emitter breakdown (max):	650 V
current - collector (ic) (max):	33 A
power - max:	135 W
vce(on) (max) @ vge, ic:	-
current - collector cutoff (max):	-
input capacitance (cies) @ vce:	4.86 nF @ 400 V
input:	Standard
ntc thermistor:	No
operating temperature:	-55°C ~ 150°C (TJ)
mounting type:	Through Hole
package / case:	-
supplier device package:	-

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