NXH50C120L2C2ES1G

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Gamintojo dalis	NXH50C120L2C2ES1G
Gamintojas	Sanyo Semiconductor/ON Semiconductor
apibūdinimas	IGBT MOD 1200V 50A 26DIP
Kategorija	atskiri puslaidininkiniai gaminiai
Šeima	tranzistoriai - igbts - moduliai
Gyvenimo ciklas:	New from this manufacturer.
Pristatymas:	DHL FedEx Ups TNT EMS
Mokėjimas	T/T Paypal Visa MoneyGram Western Union

Prieinamumas

Prekyboje	637 956
Vieneto kaina	$ 56.66833

NXH50C120L2C2ES1G Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

NXH50C120L2C2ES1G Specifikacijos

Tipas	apibūdinimas
series:	-
package:	Tube
part status:	Active
igbt type:	-
configuration:	Three Phase Inverter with Brake
voltage - collector emitter breakdown (max):	1200 V
current - collector (ic) (max):	50 A
power - max:	20 mW
vce(on) (max) @ vge, ic:	2.4V @ 15V, 50A
current - collector cutoff (max):	250 µA
input capacitance (cies) @ vce:	11.89 nF @ 20 V
input:	Three Phase Bridge Rectifier
ntc thermistor:	Yes
operating temperature:	-40°C ~ 150°C (TJ)
mounting type:	Through Hole
package / case:	26-PowerDIP Module (1.199", 47.20mm)
supplier device package:	26-DIP

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