FPF2C110BI07AS2

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Gamintojo dalis	FPF2C110BI07AS2
Gamintojas	Sanyo Semiconductor/ON Semiconductor
apibūdinimas	IGBT MODULE 650V 40A 300W F2
Kategorija	atskiri puslaidininkiniai gaminiai
Šeima	tranzistoriai - igbts - moduliai
Gyvenimo ciklas:	New from this manufacturer.
Pristatymas:	DHL FedEx Ups TNT EMS
Mokėjimas	T/T Paypal Visa MoneyGram Western Union
Duomenų lapas	FPF2C110BI07AS2 PDF

Prieinamumas

Prekyboje	717 704
Vieneto kaina	$ 73.73357

FPF2C110BI07AS2 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

FPF2C110BI07AS2 Specifikacijos

Tipas	apibūdinimas
series:	-
package:	Tray
part status:	Active
igbt type:	-
configuration:	Half Bridge
voltage - collector emitter breakdown (max):	650 V
current - collector (ic) (max):	40 A
power - max:	300 W
vce(on) (max) @ vge, ic:	2.3V @ 15V, 40A
current - collector cutoff (max):	250 µA
input capacitance (cies) @ vce:	-
input:	Standard
ntc thermistor:	Yes
operating temperature:	-40°C ~ 150°C
mounting type:	Through Hole
package / case:	30-DIP Module
supplier device package:	F2

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