TP65H035G4WS

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Gamintojo dalis	TP65H035G4WS
Gamintojas	Transphorm
apibūdinimas	GANFET N-CH 650V 46.5A TO247-3
Kategorija	atskiri puslaidininkiniai gaminiai
Šeima	tranzistoriai - fetai, mosfetai - vienviečiai
Gyvenimo ciklas:	New from this manufacturer.
Pristatymas:	DHL FedEx Ups TNT EMS
Mokėjimas	T/T Paypal Visa MoneyGram Western Union
Duomenų lapas	TP65H035G4WS PDF

Prieinamumas

Prekyboje	503
Vieneto kaina	$ 17.65000

TP65H035G4WS Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

TP65H035G4WS Specifikacijos

Tipas	apibūdinimas
series:	-
package:	Tube
part status:	Active
fet type:	N-Channel
technology:	GaNFET (Cascode Gallium Nitride FET)
drain to source voltage (vdss):	650 V
current - continuous drain (id) @ 25°c:	46.5A (Tc)
drive voltage (max rds on, min rds on):	10V
rds on (max) @ id, vgs:	41mOhm @ 30A, 10V
vgs(th) (max) @ id:	4.8V @ 1mA
gate charge (qg) (max) @ vgs:	22 nC @ 0 V
vgs (max):	±20V
input capacitance (ciss) (max) @ vds:	1500 pF @ 400 V
fet feature:	-
power dissipation (max):	156W (Tc)
operating temperature:	-55°C ~ 150°C
mounting type:	Through Hole
supplier device package:	TO-247-3
package / case:	TO-247-3

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.